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savantic semiconductor product specification silicon pnp power transistors 2SA1170 d escription with mt-200 package high power dissipation complement to type 2sc2774 applications audio and general purpose applications pinning (see fig.2) pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -200 v v ceo collector-emitter voltage open base -200 v v ebo emitter-base voltage open collector -6 v i c collector current -17 a i b base current -5 a p c collector power dissipation t c =25 200 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (mt-200) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1170 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma ; i b =0 -200 v v (br)ebo emitter-base breakdown voltage i e =-1ma ; i c =0 -6 v v cesat collector-emitter saturation voltage i c =-10a ;i b =-1a -2.5 v i cbo collector cut-off current v cb =-200v; i e =0 -100 a i ebo emitter cut-off current v eb =-6v; i c =0 -100 a h fe dc current gain i c =-8a ; v ce =-4v 20 f t transition frequency i c =-1a ; v ce =-12v 20 mhz switching times t r rise time 0.6 s t stg storage time 0.9 s t f fall time i c =-10a; i b1 =- i b2 =-1a r l =4 a ;v cc =-40v 0.2 s downloaded from: http:///
savantic semiconductor product specification 3 silicon pnp power transistors 2SA1170 package outline fig.2 outline dimensions downloaded from: http:///

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